GD100FFK120C6S

IGBT by StarPower (277 more products)

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The GD100FFK120C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.15 to 2.65 V, DC Collector Current 150 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD100FFK120C6S can be seen below.

Product Specifications

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Product Details

Part Number
GD100FFK120C6S
Manufacturer
StarPower
Description
1200 V IGBT Module

General

No. of Transistors

Hex
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

2.15 to 2.65 V
DC Collector Current

150 A
Junction Temperature

150 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1200 V
Power Dissipation

570 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply