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GD100HFK120C1S

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GD100HFK120C1S Image

The GD100HFK120C1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.2 to 2.5 V, DC Collector Current 100 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD100HFK120C1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD100HFK120C1S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.2 to 2.5 V
  • DC Collector Current
    100 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    694 W
  • Package Type
    Module
  • Applications
    UPS, Switching mode power supplies, Electronic welders

Technical Documents
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