GD10PJK120F1S

IGBT by StarPower (277 more products)

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The GD10PJK120F1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.15 to 2.65 V, DC Collector Current 20 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD10PJK120F1S can be seen below.

Product Specifications

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Product Details

Part Number
GD10PJK120F1S
Manufacturer
StarPower
Description
1200 V IGBT Module

General

No. of Transistors

Seven
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

2.15 to 2.65 V
DC Collector Current

20 A
Junction Temperature

150 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1200 V
Power Dissipation

100 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply