GD10PJX65F1S

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The GD10PJX65F1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 20 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD10PJX65F1S can be seen below.

Product Specifications

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Product Details

Part Number
GD10PJX65F1S
Manufacturer
StarPower
Description
650 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Seven
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.45 to 1.9 V
DC Collector Current

20 A
Junction Temperature

150 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

650 V
Power Dissipation

79 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply