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GD1400HFY120P2S

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GD1400HFY120P2S Image

The GD1400HFY120P2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 2315 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD1400HFY120P2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD1400HFY120P2S
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    2315 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    7940 W
  • Package Type
    Module
  • Applications
    High Power Converter, Solar Power, Hybrid and Electric Vehicle

Technical Documents
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