GD150FFX65C6S

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The GD150FFX65C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 181 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD150FFX65C6S can be seen below.

Product Specifications

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Product Details

Part Number
GD150FFX65C6S
Manufacturer
StarPower
Description
650 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Hex
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.45 to 1.9 V
DC Collector Current

181 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

650 V
Power Dissipation

442 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply