GD150HFK120C2S

IGBT by StarPower (277 more products)

Download Datasheet Request Quote

Note : Your request will be directed to StarPower.

The GD150HFK120C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.15 to 2.65 V, DC Collector Current 260 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD150HFK120C2S can be seen below.

Product Specifications

View similar products

Product Details

Part Number
GD150HFK120C2S
Manufacturer
StarPower
Description
1200 V IGBT Module

General

No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

2.15 to 2.65 V
DC Collector Current

260 A
Junction Temperature

150 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1200 V
Power Dissipation

1190 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply