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GD200FFY120C6S

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GD200FFY120C6S Image

The GD200FFY120C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 309 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD200FFY120C6S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD200FFY120C6S
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    309 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1006 W
  • Package Type
    Module
  • Applications
    Uninterruptible power supply, Inductive heating, Welding machine

Technical Documents
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