GD200HFX170C2S

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The GD200HFX170C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.35 V, DC Collector Current 337 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD200HFX170C2S can be seen below.

Product Specifications

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Product Details

Part Number
GD200HFX170C2S
Manufacturer
StarPower
Description
1700 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.85 to 2.35 V
DC Collector Current

337 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1700 V
Power Dissipation

1271 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply