GD200HFX65C8S

IGBT by StarPower (277 more products)

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The GD200HFX65C8S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 247 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD200HFX65C8S can be seen below.

Product Specifications

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Product Details

Part Number
GD200HFX65C8S
Manufacturer
StarPower
Description
650 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.45 to 1.9 V
DC Collector Current

247 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

650 V
Power Dissipation

612 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply