GD300HFX65C2S

IGBT by StarPower (277 more products)

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The GD300HFX65C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 343 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD300HFX65C2S can be seen below.

Product Specifications

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Product Details

Part Number
GD300HFX65C2S
Manufacturer
StarPower
Description
650 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.45 to 1.9 V
DC Collector Current

343 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

650 V
Power Dissipation

819 W
Package Type

Module
Applications

Automotive application, Hybrid and electric vehicle, Inverter for motor drive