GD400FFX65P3H

IGBT by StarPower (277 more products)

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The GD400FFX65P3H from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 500 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD400FFX65P3H can be seen below.

Product Specifications

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Product Details

Part Number
GD400FFX65P3H
Manufacturer
StarPower
Description
650 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Hex
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.45 to 1.9 V
DC Collector Current

500 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

650 V
Power Dissipation

750 W
Package Type

Module
Applications

Automotive application, Hybrid and electric vehicle, Inverter for motor drive