GD50HFL170C1S

IGBT by StarPower (277 more products)

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The GD50HFL170C1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3 to 3.1 V, DC Collector Current 80 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD50HFL170C1S can be seen below.

Product Specifications

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Product Details

Part Number
GD50HFL170C1S
Manufacturer
StarPower
Description
1700 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

3 to 3.1 V
DC Collector Current

80 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1700 V
Power Dissipation

442 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply