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GD50PIX170C6S

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GD50PIX170C6S Image

The GD50PIX170C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.35 V, DC Collector Current 100 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD50PIX170C6S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD50PIX170C6S
  • Manufacturer
    StarPower
  • Description
    1700 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.35 V
  • DC Collector Current
    100 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    418 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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