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GD600HFX170C6S

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GD600HFX170C6S Image

The GD600HFX170C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.35 V, DC Collector Current 1069 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD600HFX170C6S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD600HFX170C6S
  • Manufacturer
    StarPower
  • Description
    1700 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.35 V
  • DC Collector Current
    1069 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    4166 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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