GD600SGL170C2S

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GD600SGL170C2S Image

The GD600SGL170C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.5 to 3 V, DC Collector Current 880 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD600SGL170C2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD600SGL170C2S
  • Manufacturer
    StarPower
  • Description
    1700 V IGBT Module

General

  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.5 to 3 V
  • DC Collector Current
    880 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    3750 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents

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