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GD75FFK120C6SD

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The GD75FFK120C6SD from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.15 to 2.65 V, DC Collector Current 130 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD75FFK120C6SD can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD75FFK120C6SD
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.15 to 2.65 V
  • DC Collector Current
    130 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    571 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
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