GD75FSY120L3S

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The GD75FSY120L3S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 to 2.1 V, DC Collector Current 150 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GD75FSY120L3S can be seen below.

Product Specifications

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Product Details

Part Number
GD75FSY120L3S
Manufacturer
StarPower
Description
1200 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Hex
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.65 to 2.1 V
DC Collector Current

150 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.1 uA
Collector Emitter Voltage

1200 V
Power Dissipation

576 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply