GD75PIY120C6SN

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The GD75PIY120C6SN from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 117 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GD75PIY120C6SN can be seen below.

Product Specifications

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Product Details

Part Number
GD75PIY120C6SN
Manufacturer
StarPower
Description
1200 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Seven
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.7 to 2.15 V
DC Collector Current

117 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.1 uA
Collector Emitter Voltage

1200 V
Power Dissipation

380 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply