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GD75PIY120C6SNF

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GD75PIY120C6SNF Image

The GD75PIY120C6SNF from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 117 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GD75PIY120C6SNF can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD75PIY120C6SNF
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    117 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    380 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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