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GD900HFY120P1S

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GD900HFY120P1S Image

The GD900HFY120P1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 1522 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD900HFY120P1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD900HFY120P1S
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    1522 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    5240 W
  • Package Type
    Module
  • Applications
    High Power Converter, Solar Power, Hybrid and Electric Vehicle

Technical Documents
View details on the manufacturer's website
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