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STG80H65FBD7

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The STG80H65FBD7 from STMicroelectronics is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.6 V, DC Collector Current 80 A, Junction Temperature -55 to 175 Degree C, Gate Emitter Leakage Current -0.25 to 0.25 uA. More details for STG80H65FBD7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STG80H65FBD7
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    6.50 x 6.30 mm
  • Saturated Collector Emitter Voltage
    1.6 V
  • DC Collector Current
    80 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    650 V
  • Package
    Die
  • Package Type
    Surface Mount
  • Applications
    Solar, UPS, Welding, High-frequency converters, PFC
  • RoHS Compliant
    Yes

Technical Documents
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