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STGB10H60DF

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STGB10H60DF Image

The STGB10H60DF from STMicroelectronics is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.50 to 1.95 V, DC Collector Current 10 to 20 A, DC Forward Current 10 to 20 A, Gate Emitter Leakage Current 0.25 uA. More details for STGB10H60DF can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGB10H60DF
  • Manufacturer
    STMicroelectronics
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.95 V
  • DC Collector Current
    10 to 20 A
  • DC Forward Current
    10 to 20 A
  • Gate Emitter Leakage Current
    0.25 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    115 W
  • Package
    D2PAK
  • Package Type
    Surface Mount
  • Applications
    Motor control, UPS, PFC

Technical Documents
View details on the manufacturer's website
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