The STGD18N40LZT4 from STMicroelectronics is a IGBT with Gate Emitter Voltage 12 to 16 V, Saturated Collector Emitter Voltage 1.30 to 1.70 V, DC Collector Current 30 A, Gate Emitter Leakage Current 450 to 830 uA, Operating Temperature -55 to 175 Degree C. More details for STGD18N40LZT4 can be seen below.