The STGD5H60DF from STMicroelectronics is a Field-Stop Trench IGBT that is ideal for UPS, PFC, and motor control applications. It has a collector-emitter breakdown voltage of over 600 V, collector-emitter saturation voltage of up to 1.6 V, and gate-emitter voltage of less than 20 V. This IGBT has a collector current of up to 10 A and a gate-emitter leakage current of less than 250 nA. It has a power dissipation of up to 83 W and is built using an advanced proprietary trench gate field-stop structure that integrates an ultrafast soft recovery anti-parallel diode. The IGBT has a slightly positive temperature coefficient and very tight parameter distribution that result in a safe paralleling operation.

This STGD5H60DF provides an optimum compromise between conduction and switching losses to enhance the efficiency of high switching frequency converters. It is available in a surface-mount package that measures 6.4 x 9.35 mm.