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STGFW20V60DF

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STGFW20V60DF Image

The STGFW20V60DF from STMicroelectronics is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 to 2.2 V, DC Collector Current 20 to 40 A, DC Forward Current 20 to 40 A, Junction Temperature -55 to 175 Degree C. More details for STGFW20V60DF can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGFW20V60DF
  • Manufacturer
    STMicroelectronics
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.2 V
  • DC Collector Current
    20 to 40 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    0.25 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    86.7 W
  • Package
    TO-3PF
  • Package Type
    Through Hole
  • Applications
    Photovoltaic inverters, Uninterruptible power supply, Welding, Power factor correction, Very high frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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