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STGP20H65FB2

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STGP20H65FB2 Image

The STGP20H65FB2 from STMicroelectronics is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 to 2.1 V, DC Collector Current 25 to 40 A, Junction Temperature -55 to 175 Degree C, Gate Emitter Leakage Current -0.25 to 0.25 uA. More details for STGP20H65FB2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGP20H65FB2
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.1 V
  • DC Collector Current
    25 to 40 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    147 W
  • Package
    TO-220
  • Package Type
    Through Hole
  • Applications
    Welding, Power factor correction, UPS, Solar inverters, Chargers
  • RoHS Compliant
    Yes

Technical Documents
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