The STGW20IH125DF from STMicroelectronics is a Field Stop Trench IGBT that is ideal for induction heating, microwave oven, and resonant converters applications. It has a collector-emitter breakdown voltage of over 1250 V, a saturated collector-emitter voltage of 2.55 V, and a gate-emitter voltage of ±20 V. This IGBT has a collector current of up to 40 A, a forward current of less than 40 A, and a gate-emitter leakage current of 250 nA. It has a power dissipation of less than 259 W. This IGBT is developed using an advanced proprietary field-stop trench gate technology for soft commutation, minimized tail current, and strict parameter distribution, ensuring optimal power utilization. It is integrated with a very low forward voltage, soft recovery diode while enabling safe and parallel operations in a low, thermal-resistant, lead-free package. This RoHS-compliant IGBT is available in a through-hole package that measures 34.05 x 15.45 mm.