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STGW50H65DFB2-4

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STGW50H65DFB2-4 Image

The STGW50H65DFB2-4 from STMicroelectronics is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.85 V, DC Collector Current 53 to 86 A, DC Forward Current 38 to 60 A, Junction Temperature -55 to 175 Degree C. More details for STGW50H65DFB2-4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGW50H65DFB2-4
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.85 V
  • DC Collector Current
    53 to 86 A
  • DC Forward Current
    38 to 60 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    272 W
  • Package
    TO247-4
  • Package Type
    Through Hole
  • Applications
    Welding, Power factor correction, UPS, Solar inverters, Chargers
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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