1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. STMicroelectronics
  6. STGW80H65DFB

STGW80H65DFB

Download Datasheet Request Quote

Note : Your request will be directed to STMicroelectronics.

STGW80H65DFB Image

The STGW80H65DFB from STMicroelectronics is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.6 V, DC Collector Current 80 to 120 A, DC Forward Current 80 to 120 A, Junction Temperature -55 to 175 Degree C. More details for STGW80H65DFB can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    STGW80H65DFB
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.6 V
  • DC Collector Current
    80 to 120 A
  • DC Forward Current
    80 to 120 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    469 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Photovoltaic inverters, High frequency converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products