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GT50JR22

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GT50JR22 Image

The GT50JR22 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.55 to 2.2 V, DC Collector Current 44 to 50 A, DC Forward Current 40 A, Junction Temperature 175 Degree C. More details for GT50JR22 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT50JR22
  • Manufacturer
    Toshiba
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.55 to 2.2 V
  • DC Collector Current
    44 to 50 A
  • DC Forward Current
    40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    115 to 230 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Dedicated to Current-Resonant Inverter Switching Applications
  • RoHS Compliant
    Yes

Technical Documents
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