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GT50MR21

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The GT50MR21 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.7 to 2.3 V, DC Collector Current 50 A, DC Forward Current 20 A, Junction Temperature 175 Degree C. More details for GT50MR21 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT50MR21
  • Manufacturer
    Toshiba
  • Description
    900 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.3 V
  • DC Collector Current
    50 A
  • DC Forward Current
    20 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    900 V
  • Power Dissipation
    230 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Dedicated to Voltage-Resonant Inverter Switching Applications
  • RoHS Compliant
    Yes
View details on the manufacturer's website
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