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GT50N322A

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GT50N322A Image

The GT50N322A from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 2.2 to 2.8 V, DC Collector Current 50 A, DC Forward Current 15 A, Junction Temperature 150 Degree C. More details for GT50N322A can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT50N322A
  • Manufacturer
    Toshiba
  • Description
    1000 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    2.2 to 2.8 V
  • DC Collector Current
    50 A
  • DC Forward Current
    15 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    1000 V
  • Power Dissipation
    156 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Voltage Resonance Inverter Switching Application Fifth Generation IGBT
  • RoHS Compliant
    Yes

Technical Documents
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