The GT50NR21 from Toshiba is an N-Channel Enhancement Mode Silicon IGBT that is ideal for voltage-resonant inverter switching applications. It has a collector-emitter voltage of up to 1050 V, a gate-emitter voltage of ±25 V, and a saturated collector-emitter voltage of 1.8 V. This IGBT has a collector current of less than 50 A and a gate-emitter leakage current of ±100 nA. It is based on the 6.5th generation technology and consists of a freewheeling diode that is monolithically integrated on an IGBT chip. This Silicon IGBT offers a high-speed switching operation with a rise time of 0.50 µs (diode) and a fall time of 0.20 µs (IGBT). It is available in a through-hole package that measures 15.5 x 40.5 mm.