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GT60PR21

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GT60PR21 Image

The GT60PR21 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.1 to 2.5 V, DC Collector Current 53 to 60 A, DC Forward Current 30 A, Junction Temperature 175 Degree C. More details for GT60PR21 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GT60PR21
  • Manufacturer
    Toshiba
  • Description
    1100 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.1 to 2.5 V
  • DC Collector Current
    53 to 60 A
  • DC Forward Current
    30 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1100 V
  • Power Dissipation
    333 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Dedicated to Voltage-Resonant Inverter Switching Applications
  • RoHS Compliant
    Yes

Technical Documents
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