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VS-GP100TS60SFPbF

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VS-GP100TS60SFPbF Image

The VS-GP100TS60SFPbF from Vishay is a IGBT with Gate Emitter Voltage 20 V, DC Collector Current 235 to 337 A, Gate Emitter Leakage Current 0.5 uA, Operating Temperature -40 to 150 Degree C, Collector Emitter Voltage 600 V. More details for VS-GP100TS60SFPbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GP100TS60SFPbF
  • Manufacturer
    Vishay
  • Description
    600 V ,Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    20 V
  • DC Collector Current
    235 to 337 A
  • Gate Emitter Leakage Current
    0.5 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    312 to 781 W
  • Package
    INT-A-PAK
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
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