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VS-GP400TD60S

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VS-GP400TD60S Image

The VS-GP400TD60S from Vishay is a IGBT with Gate Emitter Voltage 20 V, DC Collector Current 525 to 758 A, DC Forward Current 145 to 219 A, Gate Emitter Leakage Current 0.75 uA, Operating Temperature -40 to 150 Degree C. More details for VS-GP400TD60S can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GP400TD60S
  • Manufacturer
    Vishay
  • Description
    600 V ,Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • DC Collector Current
    525 to 758 A
  • DC Forward Current
    145 to 219 A
  • Gate Emitter Leakage Current
    0.75 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    875 to 1563 W
  • Package
    Dual INT-A-PAK low profile
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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