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VS-GT100DA120UF

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VS-GT100DA120UF Image

The VS-GT100DA120UF from Vishay is a IGBT with Gate Emitter Voltage 20 V, DC Collector Current 123 to 187 A, DC Forward Current 61 to 97 A, Gate Emitter Leakage Current 0.22 uA, Operating Temperature -40 to 150 Degree C. More details for VS-GT100DA120UF can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GT100DA120UF
  • Manufacturer
    Vishay
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • DC Collector Current
    123 to 187 A
  • DC Forward Current
    61 to 97 A
  • Gate Emitter Leakage Current
    0.22 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    194 to 890 W
  • Package
    SOT-227
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
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