VS-GT90DA60U

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VS-GT90DA60U Image

The VS-GT90DA60U from Vishay is a Field Stop Trench IGBT that has been designed for increased operating efficiency in power conversion: UPS, SMPS, welding, and induction heating. It has a collector-emitter breakdown voltage of over 600 V, a saturated collector-emitter voltage of 1.64 V, and a gate-emitter voltage of ±20 V. This RBSOA-rated IGBT has a continuous collector current of less than 146 A and a pulsed collector current of up to 300 A. It has a power dissipation of less than 446 W. This IGBT is designed using Trench IGBT technology which offers low EMI and less snubbing. It integrates HEXFRED anti-parallel diodes with ultrasoft reverse recovery and has very low internal inductance, lower conduction losses, and switching losses. 

This RoHS-compliant IGBT enables direct mounting to a heatsink and is an easy paralleling option due to the positive temperature coefficient of saturated collector-emitter voltage. It is available in a surface mount package that measures 38.30 x 25.70 mm.

Product Specifications

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Product Details

  • Part Number
    VS-GT90DA60U
  • Manufacturer
    Vishay
  • Description
    Field Stop Trench IGBT for UPS Applications

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    38.30 x 25.70 mm
  • Saturated Collector Emitter Voltage
    1.64 V
  • DC Collector Current
    146 A
  • Peak Collector Current
    300 A
  • DC Forward Current
    100 to 108 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 A
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    446 W
  • Package
    SOT-227
  • Package Type
    Surface Mount
  • Applications
    UPS, SMPS, welding, and induction heating
  • RoHS Compliant
    Yes

Technical Documents

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