The MG50P12E1A from Yangjie Electronic Technology is a Hex-Channel IGBT that is ideal for motor drivers, AC and DC servo drive amplifiers, and uninterruptible power supply applications. It has a collector-emitter voltage of up to 1200 V, a gate-emitter voltage of ±20 V, and a saturated collector-emitter voltage of 2.2 V. This IGBT has a collector current of up to 50 A and a gate-emitter leakage current of less than 400 nA. It has a low saturated collector-emitter voltage with a positive temperature coefficient and is designed in a low inductance case to reduce switching loss. This IGBT module includes a fast and soft recovery anti-parallel free-wheeling diode that offers short-circuit protection to prevent over-current-related damages. It is available in a module that measures 107.5 x 45 mm.