CP613V-J175-WN

Junction Field Effect Transistor (JFET) by Central Semiconductor (76 more products)

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CP613V-J175-WN Image

The CP613V-J175-WN from Central Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 7.0 to 60 mA, Gate Source Voltage 30 V, Drain Source Resistance 125 Ohm, Gate Current 50 mA, Gate Reverse Current 1.0 nA. Tags: Die. More details for CP613V-J175-WN can be seen below.

Product Specifications

Product Details

  • Part Number
    CP613V-J175-WN
  • Manufacturer
    Central Semiconductor
  • Description
    30 V, 50 mA, Silicon P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Drain Saturation Current
    7.0 to 60 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    30 V
  • Drain Source Resistance
    125 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    1.0 nA
  • Power Dissipation
    0.225 W
  • Operating Temperature
    -65 to 150 Degree C
  • Package Type
    Die
  • Dimension
    3.05 x 2.49 x 1.09 mm

Technical Documents