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MX2N5114

Junction Field Effect Transistor (JFET) by Microchip Technology (17 more products)
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MX2N5114 Image

The MX2N5114 from Microchip Technology is a Junction Field Effect Transistor (JFET) with Gate Source Voltage 30 V, Continous Drain Current -30 to -90 mA, Drain Source Breakdown Voltage 30 V, Drain Source Resistance 75 Ohm, Gate Current 50 mA. Tags: Through Hole. More details for MX2N5114 can be seen below.

Product Specifications

Product Details

  • Part Number
    MX2N5114
  • Manufacturer
    Microchip Technology
  • Description
    0.500 W, 30 V , 50 mA, , P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial, Military
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    30 V
  • Continous Drain Current
    -30 to -90 mA
  • Drain Source Breakdown Voltage
    30 V
  • Drain Source Resistance
    75 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    500 pA
  • Power Dissipation
    0.500 W
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    25 pF
  • Package Type
    Through Hole
  • Package
    TO-18
  • Fall Time
    6 ns
  • Rise Time
    10 ns

Technical Documents
View details on the manufacturer's website
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