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GA05JT12-263

Junction Field Effect Transistor (JFET) by Navitas Semiconductor (10 more products)
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GA05JT12-263 Image

The GA05JT12-263 from Navitas Semiconductor is a Junction Field Effect Transistor (JFET) with Continous Drain Current 5 to 15 A, Drain Source Breakdown Voltage 1200 V, Drain Source Resistance 0.18 to 0.368 Ohm, Gate Current 0.25 A, Gate Reverse Current 0.25 A. Tags: Surface Mount. More details for GA05JT12-263 can be seen below.

Product Specifications

Product Details

  • Part Number
    GA05JT12-263
  • Manufacturer
    Navitas Semiconductor
  • Description
    1200 V, 0.25 A, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    5 to 15 A
  • Drain Source Breakdown Voltage
    1200 V
  • Drain Source Resistance
    0.18 to 0.368 Ohm
  • Gate Current
    0.25 A
  • Gate Reverse Current
    0.25 A
  • Power Dissipation
    10 to 106 W
  • Gate Charge
    27 nC
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    585 pF
  • Package Type
    Surface Mount
  • Package
    TO-263-7L
  • Fall Time
    7 ns
  • Rise Time
    10 ns
  • RoHS Compliant
    Yes
  • Application
    Down Hole Oil Drilling, Geothrmal Instrumentation, Hybrid Electric Vehicles (HEV), Solar Inverters, Switched-Mode Power Supply (SMPS), Power Factor Correction (PFC), Induction Heating, Uniterruptible Power Supply (UPS), Motor Drivers

Technical Documents
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