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GA08JT17-247

Junction Field Effect Transistor (JFET) by Navitas Semiconductor (10 more products)
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GA08JT17-247 Image

The GA08JT17-247 from Navitas Semiconductor is a Junction Field Effect Transistor (JFET) with Continous Drain Current 8 A, Drain Source Breakdown Voltage 1700 V, Drain Source Resistance 0.23 to 0.56 Ohm, Gate Current 1.5 A, Power Dissipation 48 W. Tags: Through Hole. More details for GA08JT17-247 can be seen below.

Product Specifications

Product Details

  • Part Number
    GA08JT17-247
  • Manufacturer
    Navitas Semiconductor
  • Description
    1700 V, 1.5 A, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    8 A
  • Drain Source Breakdown Voltage
    1700 V
  • Drain Source Resistance
    0.23 to 0.56 Ohm
  • Gate Current
    1.5 A
  • Power Dissipation
    48 W
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    850 pF
  • Package Type
    Through Hole
  • Package
    TO-247AB
  • Fall Time
    22 ns
  • Rise Time
    14 ns
  • RoHS Compliant
    Yes
  • Application
    Down Hole Oil Drilling, Geothrmal Instrumentation, Hybrid Electric Vehicles (HEV), Solar Inverters, Switched-Mode Power Supply (SMPS), Power Factor Correction (PFC), Induction Heating, Uniterruptible Power Supply (UPS), Motor Drivers

Technical Documents
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