1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. Junction Field Effect Transistors
  5. Navitas Semiconductor
  6. GA10JT12-263

GA10JT12-263

Junction Field Effect Transistor (JFET) by Navitas Semiconductor (10 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Navitas Semiconductor.

GA10JT12-263 Image

The GA10JT12-263 from Navitas Semiconductor is a Junction Field Effect Transistor (JFET) with Continous Drain Current 10 to 25 A, Drain Source Breakdown Voltage 1200 V, Drain Source Resistance 0.1 to 0.175 Ohm, Gate Current 1.3 A, Gate Reverse Current 1.3 A. Tags: Surface Mount. More details for GA10JT12-263 can be seen below.

Product Specifications

Product Details

  • Part Number
    GA10JT12-263
  • Manufacturer
    Navitas Semiconductor
  • Description
    1200 V, 1.3 A, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    10 to 25 A
  • Drain Source Breakdown Voltage
    1200 V
  • Drain Source Resistance
    0.1 to 0.175 Ohm
  • Gate Current
    1.3 A
  • Gate Reverse Current
    1.3 A
  • Power Dissipation
    22 to 170 W
  • Gate Charge
    67 nC
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    1275 pF
  • Package Type
    Surface Mount
  • Package
    TO-263-7L
  • Fall Time
    10 ns
  • Rise Time
    10 ns
  • RoHS Compliant
    Yes
  • Application
    Down Hole Oil Drilling, Geothrmal Instrumentation, Hybrid Electric Vehicles (HEV), Solar Inverters, Switched-Mode Power Supply (SMPS), Power Factor Correction (PFC), Induction Heating, Uniterruptible Power Supply (UPS), Motor Drivers

Technical Documents
View details on the manufacturer's website
View similar products