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GA50JT12-247

Junction Field Effect Transistor (JFET) by Navitas Semiconductor (10 more products)
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GA50JT12-247 Image

The GA50JT12-247 from Navitas Semiconductor is a Junction Field Effect Transistor (JFET) with Continous Drain Current 50 to 100 A, Drain Source Breakdown Voltage 1200 V, Drain Source Resistance 0.02 to 0.035 Ohm, Gate Current 3.5 A, Power Dissipation 116 to 583 W. Tags: Through Hole. More details for GA50JT12-247 can be seen below.

Product Specifications

Product Details

  • Part Number
    GA50JT12-247
  • Manufacturer
    Navitas Semiconductor
  • Description
    1200 V, 3.5 A, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    50 to 100 A
  • Drain Source Breakdown Voltage
    1200 V
  • Drain Source Resistance
    0.02 to 0.035 Ohm
  • Gate Current
    3.5 A
  • Power Dissipation
    116 to 583 W
  • Gate Charge
    245 nC
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    7080 pF
  • Package Type
    Through Hole
  • Package
    TO-247
  • Fall Time
    35 ns
  • Rise Time
    20 ns
  • RoHS Compliant
    Yes
  • Application
    Down Hole Oil Drilling, Geothrmal Instrumentation, Hybrid Electric Vehicles (HEV), Solar Inverters, Switched-Mode Power Supply (SMPS), Power Factor Correction (PFC), Induction Heating, Uniterruptible Power Supply (UPS), Motor Drivers

Technical Documents
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