2N3460

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)

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2N3460 Image

The 2N3460 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 0.2 to 1.0 mA, Gate Source Voltage 50 V, Gate Current 10 mA, Gate Reverse Current 0.25 nA, Power Dissipation 0.3 W. Tags: Through Hole. More details for 2N3460 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3460
  • Manufacturer
    New Jersey Semiconductor
  • Description
    50 V, 10 mA, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    0.2 to 1.0 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    50 V
  • Gate Current
    10 mA
  • Gate Reverse Current
    0.25 nA
  • Power Dissipation
    0.3 W
  • Operating Temperature
    -65 to 175 Degree C
  • Input Capacitance
    18 pF
  • Noise Figure
    4.0 dB
  • Package Type
    Through Hole
  • Package
    TO-18

Technical Documents