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2N5460

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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2N5460 Image

The 2N5460 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 1.0 to 5.0 mA, Gate Source Voltage 40 V, Forward Transfer Admittance 1.0 mS, Power Dissipation 0.35 W, Operating Temperature -65 to 150 Degree C. Tags: Through Hole. More details for 2N5460 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5460
  • Manufacturer
    New Jersey Semiconductor
  • Description
    40 V, P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Drain Saturation Current
    1.0 to 5.0 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    40 V
  • Forward Transfer Admittance
    1.0 mS
  • Power Dissipation
    0.35 W
  • Operating Temperature
    -65 to 150 Degree C
  • Input Capacitance
    7.0 pF
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents
View details on the manufacturer's website
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