1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. Junction Field Effect Transistors
  5. New Jersey Semiconductor
  6. BFW12

BFW12

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
Request Quote

Note : Your request will be directed to New Jersey Semiconductor.

The BFW12 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Gate Source Voltage -30 V, Drain Source Breakdown Voltage 30 V, Power Dissipation 0.15 W, Operating Temperature -65 to 175 Degree C. More details for BFW12 can be seen below.

Product Specifications

Product Details

  • Part Number
    BFW12
  • Manufacturer
    New Jersey Semiconductor
  • Description
    -30 V, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    -30 V
  • Drain Source Breakdown Voltage
    30 V
  • Power Dissipation
    0.15 W
  • Operating Temperature
    -65 to 175 Degree C
View details on the manufacturer's website