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J113

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)
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The J113 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 2 mA, Gate Source Voltage 40 V, Continous Drain Current 2 mA, Drain Source Breakdown Voltage 40 V, Drain Source Resistance 100 Ohm. Tags: Through Hole. More details for J113 can be seen below.

Product Specifications

Product Details

  • Part Number
    J113
  • Manufacturer
    New Jersey Semiconductor
  • Description
    40 V, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    2 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    40 V
  • Continous Drain Current
    2 mA
  • Drain Source Breakdown Voltage
    40 V
  • Drain Source Resistance
    100 Ohm
  • Gate Reverse Current
    1 nA
  • Power Dissipation
    0.4 W
  • Operating Temperature
    -65 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents
View details on the manufacturer's website
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